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Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization

2021-10Journal article Open access
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dc.contributor.authorCunha, J.M.V.
dc.contributor.authorBarreiros, M. Alexandra
dc.contributor.authorCurado, M.A.
dc.contributor.authorLopes, T.S.
dc.contributor.authorOliveira, K.
dc.contributor.authorOliveira, A.J.N.
dc.contributor.authorBarbosa, J.R.S.
dc.contributor.authorVilanova, António
dc.contributor.authorBrites, Maria João
dc.contributor.authorMascarenhas, João
dc.contributor.authorFlandre, Denis
dc.contributor.authorSilva, Ana G.
dc.contributor.authorFernandes, P.A.
dc.contributor.authorSalomé, P.M.P.
dc.date.accessioned2022-01-11T16:34:39Z
dc.date.available2022-01-11T16:34:39Z
dc.date.issued2021-10
dc.description.abstractABSTRACT: Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge carrier transport layer. This work discloses a new pathway for a fundamental characterization of the oxide/semiconductor interface in PSCs. Inverted MOS structures, that is, glass/fluorine-doped tin oxide/tin oxide (SnO2)/perovskite are fabricated and characterized allowing to perform a comparative study on the optoelectronic characteristics of the interface between the perovskite and sputtered SnO2. Admittance measurements allow to assess the interface fixed oxide charges (Q(f)) and interface traps density (D-it), which are extremely relevant parameters that define interface properties of extraction layers. It is concluded that a 30 nm thick SnO2 layer without annealing presents an additional recombination mechanism compared to the other studied layers, and a 20 nm thick SnO2 layer without annealing presents the highest positive Q(f) values. Thus, an effective method is shown for the characterization of the charge carrier transport layer/perovskite interface using the analysis performed on perovskite-based inverted MOS devices.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationCunha, José M.V... [et.al.] - Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization. In: Advanced Materials Interfaces, 2021, Vol. 8, article nº 2101004pt_PT
dc.identifier.doi10.1002/admi.202101004pt_PT
dc.identifier.issn2196-7350
dc.identifier.urihttp://hdl.handle.net/10400.9/3685
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherWileypt_PT
dc.relationIF/00133/2015pt_PT
dc.relationIndustrial relevant electrical passivation of thin films solar cell interfaces
dc.relationDevelopment of industrially viable nanotechnology for thin film solar cells
dc.relationCenter for Innovation in Industrial Engineering and Technology
dc.relationCenter for Physics of the University of Coimbra
dc.relationCenter for Physics of the University of Coimbra
dc.relationNovaCell - project 028075pt_PT
dc.relationInovSolarCells - project 029696pt_PT
dc.relationPOCI-01-0247-FEDER-046109pt_PT
dc.relation.publisherversionhttps://doi.org/10.1002/admi.202101004pt_PT
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/pt_PT
dc.subjectMaterialspt_PT
dc.subjectSolar cellspt_PT
dc.subjectPerovskite-type oxidespt_PT
dc.subjectThin filmspt_PT
dc.subjectPerformancept_PT
dc.titlePerovskite Metal-Oxide-Semiconductor Structures for Interface Characterizationpt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleIndustrial relevant electrical passivation of thin films solar cell interfaces
oaire.awardTitleDevelopment of industrially viable nanotechnology for thin film solar cells
oaire.awardTitleCenter for Innovation in Industrial Engineering and Technology
oaire.awardTitleCenter for Physics of the University of Coimbra
oaire.awardTitleCenter for Physics of the University of Coimbra
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/POR_CENTRO/PD%2FBD%2F142780%2F2018/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT//SFRH%2FBD%2F146776%2F2019/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F04730%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F04564%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F04564%2F2020/PT
oaire.citation.titleAdvanced Materials Interfacespt_PT
oaire.citation.volume8pt_PT
oaire.fundingStreamPOR_CENTRO
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream6817 - DCRRNI ID
person.familyNameBarreiros
person.familyNameBrites
person.familyNameMascarenhas
person.givenNameMaria Alexandra
person.givenNameMaria João de Sousa
person.givenNameJoão
person.identifierL-4674-2014
person.identifier.ciencia-id271D-7B29-E46C
person.identifier.ciencia-id6710-13F6-3011
person.identifier.ciencia-idCF18-4E59-B6B9
person.identifier.orcid0000-0002-0132-4969
person.identifier.orcid0000-0002-1081-7191
person.identifier.orcid0000-0003-0440-8057
person.identifier.ridL-3318-2014
person.identifier.scopus-author-id6603680496
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
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project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
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