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Dielectric properties of Al-Nb amorphous mixed oxides

dc.contributor.authorDi Franco, F.
dc.contributor.authorSantamaria, M.
dc.contributor.authorDi Quarto, F.
dc.contributor.authorLa Mantia, F.
dc.contributor.authorde Sá, A.I.
dc.contributor.authorRangel, C. M.
dc.date.accessioned2014-02-25T11:54:01Z
dc.date.available2014-02-25T11:54:01Z
dc.date.issued2013
dc.description.abstractAn impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The characterization of the electronic properties of mixed amorphous oxide on the basis of the theory of amorphous semiconductor Schottky barrier has been carried out for anodic film on Al-92at.%Nb in a very detailed manner. The semiconductor to insulator transition of formed oxides as a function of the alloy composition at fixed final voltage has been supported by differential admittance study. A possible rationale for this transition has been suggested taking into account the changes of solid state properties, optical bandgap and electronic structure of the films, derived from the fitting of the differential admittance curves at different frequencies.por
dc.identifier.citationDi Franco, F.; Santamaria, M.; Di Quarto, F.; La Mantia, F.; Sá, A.I. de; Rangel, C.M. Dielectric properties of Al-Nb amorphous mixed oxides. In: ECS Journal of Solid State Science and Technology, 2013, Vol. 2, nº 11, p. N205-N210por
dc.identifier.issn2162-8769
dc.identifier.urihttp://hdl.handle.net/10400.9/2210
dc.language.isoengpor
dc.publisherThe Electrochemical Societypor
dc.relation.publisherversion http://dx.doi.org/10.1149/2.012311jsspor
dc.subjectDielectric Propertiespor
dc.subjectAluminiumpor
dc.subjectMixed Oxidespor
dc.titleDielectric properties of Al-Nb amorphous mixed oxidespor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPageN210por
oaire.citation.startPageN205por
oaire.citation.titleECS Journal of Solid State Science and Technologypor
oaire.citation.volume2por
person.familyName
person.familyNameRangel
person.givenNameAna
person.givenNameCarmen M.
person.identifier.ciencia-idB615-CCF2-424E
person.identifier.ciencia-idAA13-FF7C-9E29
person.identifier.orcid0000-0003-1267-7994
person.identifier.orcid0000-0001-7996-8142
person.identifier.ridD-5477-2011
person.identifier.scopus-author-id7006108156
rcaap.rightsopenAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication5d35b81a-2f1b-4051-b8bc-d1a4b0934a01
relation.isAuthorOfPublication804e595a-d539-46a2-ae78-6cadc8ca9457
relation.isAuthorOfPublication.latestForDiscovery5d35b81a-2f1b-4051-b8bc-d1a4b0934a01

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