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Células solares ultrafinas de Cu (In,Ga)Se2 : passivação de interfaces
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Advisor(s)
Abstract(s)
RESUMO: A comunidade de Cu(In,Ga)Se2 (CIGS) tem focado grande parte da sua investigação no estudo e melhoramento das propriedades cristalinas do CIGS.A última estratégia utilizada, que tem permitido aumentar o valor de eficiência das células solares, passa pela implementação de elementos alcalinos através de tratamentos pós-deposição (PDT). Para se atingir valores de conversão de eficiência competitivos é necessário melhorar as interfaces do CIGS. Neste estudo, focamo-nos no estudo das propriedades morfológicas, estruturais e optoelectrónicas entre o CIGS e a alumina (Al2O3), que tem o potencial de ser usada como camada passivadora frontal. Pode-se concluir que as propriedades morfológicas e estruturais não são alteradas devido à deposição do Al2O3. O Al2O3 não resiste ao banho químico usado para a deposição do CdS. O Al2O3 apresenta um valor de densidade de defeitos baixos, uma propriedade desejada destas camadas. Este estudo demonstra a potencialidade de se utilizar a Al2O3, para camadas buffer alternativas, que não usem processos químicos durante a sua deposição.
ABSTRACT: Cu(In,Ga)Se2 (CIGS) community have been focusing the research line in the study and improvement of the crystalline properties of CIGS. The last trend, to increase the light to power conversion efficiency values, is the use of fluoride-alkaline post-deposition treatments. (PDT). To reach competitive efficiency values, it is necessary to focus on the improvement of CIGS interface. In this work, we focus on the study of the structural, morphological and optoelectronic properties in the interface of CIGS and alumina (Al2O3) which has the potential to be used as front passivation layer. We can conclude that the structural and morphological properties of CIGS remain the same with the deposition of Al2O3. When it was deposited the CdS, on Al2O3, the Al2O3 layer does not resist to the CdS chemical bath deposition. The interface Al2O3/CIGS has a low density of defects value, which is one of the desired properties of a passivation layer. This study demonstrates the potential of using Al2O3 as a front passivation layer with alternative buffer layers to CdS that do not use chemical processes during the deposition.
ABSTRACT: Cu(In,Ga)Se2 (CIGS) community have been focusing the research line in the study and improvement of the crystalline properties of CIGS. The last trend, to increase the light to power conversion efficiency values, is the use of fluoride-alkaline post-deposition treatments. (PDT). To reach competitive efficiency values, it is necessary to focus on the improvement of CIGS interface. In this work, we focus on the study of the structural, morphological and optoelectronic properties in the interface of CIGS and alumina (Al2O3) which has the potential to be used as front passivation layer. We can conclude that the structural and morphological properties of CIGS remain the same with the deposition of Al2O3. When it was deposited the CdS, on Al2O3, the Al2O3 layer does not resist to the CdS chemical bath deposition. The interface Al2O3/CIGS has a low density of defects value, which is one of the desired properties of a passivation layer. This study demonstrates the potential of using Al2O3 as a front passivation layer with alternative buffer layers to CdS that do not use chemical processes during the deposition.
Description
CIES2020 - XVII Congresso Ibérico e XIII Congresso Ibero-americano de Energia Solar
Keywords
Solar energy Solar cells Thin films
Citation
Curado, M.A... [et.al.] - Células solares ultrafinas de Cu (In,Ga)Se2 : passivação de interfaces. In: CIES2020: As Energias Renováveis na Transição Energética: Livro de Comunicações do XVII Congresso Ibérico e XIII Congresso Ibero-americano de Energia Solar. Helder Gonçalves, Manuel Romero (Ed.). Lisboa, Portugal: LNEG, 3-5 Novembro, 2020, p. 357-363
Publisher
LNEG - Laboratório Nacional de Energia e Geologia